A novel analytical model of a SiC MOSFET

This paper presents a novel analytical model for simulation of characteristics of a n-channel MOSFET based on silicon-carbide (SiC). Using known experimental results, a semiempirical relation for carrier mobility (/spl mu/) dependence on electric field intensity, dopant concentration and temperature...

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Main Authors: Ramovic, R., Jevtic, M., Hadzi-Vukovic, J., Randjelovic, D.
Format: Conference Proceeding
Language:English
Subjects:
Analytical models
Current-voltage characteristics
Impurities
Mathematical model
MOSFET circuits
Semiconductor process modeling
Silicon carbide
Temperature dependence
Threshold voltage
Transconductance
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Jevtic, M.
Hadzi-Vukovic, J.
Randjelovic, D.
description This paper presents a novel analytical model for simulation of characteristics of a n-channel MOSFET based on silicon-carbide (SiC). Using known experimental results, a semiempirical relation for carrier mobility (/spl mu/) dependence on electric field intensity, dopant concentration and temperature was formulated. Based on this relation appropriate analytical mathematical-physical model for simulation of current-voltage characteristics, transconductance and conductance of MOSFET were developed. All models were formulated taking into account, among other effects, the dependence of threshold voltage on temperature and impurity concentration in the channel, as well as the effect of the channel narrowing. Using the proposed model a simulation algorithm was designed and a simulation of the MOSFET's performance was performed. Results of the simulation are graphically presented in and discussed.
doi_str_mv 10.1109/MIEL.2002.1003295
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fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_1003295</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1003295</ieee_id><sourcerecordid>1003295</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-590d1eb14b5a2b70486d1b7a2eaa9cf465141049030c111ba73ff63d380913be3</originalsourceid><addsrcrecordid>eNotj8FqwkAURQeKYGv9AHEzy26SvjdvJpNZSrBWiLiwruVNMgNToilGCv59A_VsLpzFhSPEAiFHBPe-267rXAGoHAFIOfMkXsCWQFaRUVMxH4ZvGNEGS6WfxdtKXvrf0Em-cHe_pYY7ee7bUfRRsjykSu72h4_116uYRO6GMH_sTBxHW31m9X6zrVZ1ltCaW2YctBg8am9YeQu6LFr0llVgdk3UhUGNoB0QNIjo2VKMBbVUgkPygWZi-f-bQginn2s68_V-esTQHyLiPEc</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>A novel analytical model of a SiC MOSFET</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Ramovic, R. ; Jevtic, M. ; Hadzi-Vukovic, J. ; Randjelovic, D.</creator><creatorcontrib>Ramovic, R. ; Jevtic, M. ; Hadzi-Vukovic, J. ; Randjelovic, D.</creatorcontrib><description>This paper presents a novel analytical model for simulation of characteristics of a n-channel MOSFET based on silicon-carbide (SiC). Using known experimental results, a semiempirical relation for carrier mobility (/spl mu/) dependence on electric field intensity, dopant concentration and temperature was formulated. Based on this relation appropriate analytical mathematical-physical model for simulation of current-voltage characteristics, transconductance and conductance of MOSFET were developed. All models were formulated taking into account, among other effects, the dependence of threshold voltage on temperature and impurity concentration in the channel, as well as the effect of the channel narrowing. Using the proposed model a simulation algorithm was designed and a simulation of the MOSFET's performance was performed. Results of the simulation are graphically presented in and discussed.</description><identifier>ISBN: 0780372352</identifier><identifier>ISBN: 9780780372351</identifier><identifier>DOI: 10.1109/MIEL.2002.1003295</identifier><language>eng</language><publisher>IEEE</publisher><subject>Analytical models ; Current-voltage characteristics ; Impurities ; Mathematical model ; MOSFET circuits ; Semiconductor process modeling ; Silicon carbide ; Temperature dependence ; Threshold voltage ; Transconductance</subject><ispartof>2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595), 2002, Vol.2, p.447-450 vol.2</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1003295$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2056,4047,4048,27923,54918</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1003295$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Ramovic, R.</creatorcontrib><creatorcontrib>Jevtic, M.</creatorcontrib><creatorcontrib>Hadzi-Vukovic, J.</creatorcontrib><creatorcontrib>Randjelovic, D.</creatorcontrib><title>A novel analytical model of a SiC MOSFET</title><title>2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)</title><addtitle>MIEL</addtitle><description>This paper presents a novel analytical model for simulation of characteristics of a n-channel MOSFET based on silicon-carbide (SiC). Using known experimental results, a semiempirical relation for carrier mobility (/spl mu/) dependence on electric field intensity, dopant concentration and temperature was formulated. Based on this relation appropriate analytical mathematical-physical model for simulation of current-voltage characteristics, transconductance and conductance of MOSFET were developed. All models were formulated taking into account, among other effects, the dependence of threshold voltage on temperature and impurity concentration in the channel, as well as the effect of the channel narrowing. Using the proposed model a simulation algorithm was designed and a simulation of the MOSFET's performance was performed. Results of the simulation are graphically presented in and discussed.</description><subject>Analytical models</subject><subject>Current-voltage characteristics</subject><subject>Impurities</subject><subject>Mathematical model</subject><subject>MOSFET circuits</subject><subject>Semiconductor process modeling</subject><subject>Silicon carbide</subject><subject>Temperature dependence</subject><subject>Threshold voltage</subject><subject>Transconductance</subject><isbn>0780372352</isbn><isbn>9780780372351</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2002</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotj8FqwkAURQeKYGv9AHEzy26SvjdvJpNZSrBWiLiwruVNMgNToilGCv59A_VsLpzFhSPEAiFHBPe-267rXAGoHAFIOfMkXsCWQFaRUVMxH4ZvGNEGS6WfxdtKXvrf0Em-cHe_pYY7ee7bUfRRsjykSu72h4_116uYRO6GMH_sTBxHW31m9X6zrVZ1ltCaW2YctBg8am9YeQu6LFr0llVgdk3UhUGNoB0QNIjo2VKMBbVUgkPygWZi-f-bQginn2s68_V-esTQHyLiPEc</recordid><startdate>2002</startdate><enddate>2002</enddate><creator>Ramovic, R.</creator><creator>Jevtic, M.</creator><creator>Hadzi-Vukovic, J.</creator><creator>Randjelovic, D.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2002</creationdate><title>A novel analytical model of a SiC MOSFET</title><author>Ramovic, R. ; Jevtic, M. ; Hadzi-Vukovic, J. ; Randjelovic, D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-590d1eb14b5a2b70486d1b7a2eaa9cf465141049030c111ba73ff63d380913be3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Analytical models</topic><topic>Current-voltage characteristics</topic><topic>Impurities</topic><topic>Mathematical model</topic><topic>MOSFET circuits</topic><topic>Semiconductor process modeling</topic><topic>Silicon carbide</topic><topic>Temperature dependence</topic><topic>Threshold voltage</topic><topic>Transconductance</topic><toplevel>online_resources</toplevel><creatorcontrib>Ramovic, R.</creatorcontrib><creatorcontrib>Jevtic, M.</creatorcontrib><creatorcontrib>Hadzi-Vukovic, J.</creatorcontrib><creatorcontrib>Randjelovic, D.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEL</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ramovic, R.</au><au>Jevtic, M.</au><au>Hadzi-Vukovic, J.</au><au>Randjelovic, D.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A novel analytical model of a SiC MOSFET</atitle><btitle>2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)</btitle><stitle>MIEL</stitle><date>2002</date><risdate>2002</risdate><volume>2</volume><spage>447</spage><epage>450 vol.2</epage><pages>447-450 vol.2</pages><isbn>0780372352</isbn><isbn>9780780372351</isbn><abstract>This paper presents a novel analytical model for simulation of characteristics of a n-channel MOSFET based on silicon-carbide (SiC). Using known experimental results, a semiempirical relation for carrier mobility (/spl mu/) dependence on electric field intensity, dopant concentration and temperature was formulated. Based on this relation appropriate analytical mathematical-physical model for simulation of current-voltage characteristics, transconductance and conductance of MOSFET were developed. All models were formulated taking into account, among other effects, the dependence of threshold voltage on temperature and impurity concentration in the channel, as well as the effect of the channel narrowing. Using the proposed model a simulation algorithm was designed and a simulation of the MOSFET's performance was performed. Results of the simulation are graphically presented in and discussed.</abstract><pub>IEEE</pub><doi>10.1109/MIEL.2002.1003295</doi></addata></record>
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Analytical models
Current-voltage characteristics
Impurities
Mathematical model
MOSFET circuits
Semiconductor process modeling
Silicon carbide
Temperature dependence
Threshold voltage
Transconductance
title A novel analytical model of a SiC MOSFET
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-14T13%3A14%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=A%20novel%20analytical%20model%20of%20a%20SiC%20MOSFET&rft.btitle=2002%2023rd%20International%20Conference%20on%20Microelectronics.%20Proceedings%20(Cat.%20No.02TH8595)&rft.au=Ramovic,%20R.&rft.date=2002&rft.volume=2&rft.spage=447&rft.epage=450%20vol.2&rft.pages=447-450%20vol.2&rft.isbn=0780372352&rft.isbn_list=9780780372351&rft_id=info:doi/10.1109/MIEL.2002.1003295&rft_dat=%3Cieee_6IE%3E1003295%3C/ieee_6IE%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i175t-590d1eb14b5a2b70486d1b7a2eaa9cf465141049030c111ba73ff63d380913be3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1003295&rfr_iscdi=true