C-V and DLTS as characterization tools for silicon solar cells

Low frequency capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements were performed on monocrystalline silicon solar cells with a 100 cm/sup 2/ area. The deep level transient spectroscopy (DLTS) technique is a good technique for detecting the majority carrier traps by th...

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Bibliographic Details
Main Authors: Chobola, Z., Ibrahim, A., Ruzicka, Z.
Format: Conference Proceeding
Language:English
Subjects:
Area measurement
Capacitance measurement
Capacitance-voltage characteristics
Energy states
Frequency measurement
Performance evaluation
Photovoltaic cells
Silicon
Space charge
Spectroscopy
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Summary:Low frequency capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements were performed on monocrystalline silicon solar cells with a 100 cm/sup 2/ area. The deep level transient spectroscopy (DLTS) technique is a good technique for detecting the majority carrier traps by thermal emission and emission of carriers at deep energy levels which are located in the space charge region (SCR) of a p-n junction or Schottky barrier. The space charge region is essentially depleted of mobile carriers and hence is very much like the bulk insulators.
DOI:10.1109/MIEL.2002.1003371