Pyramid-shaped silicon photodetector with subwavelength aperture [for NSOM]

We present a new type of silicon photodetector with a subwavelength aperture designed to scan material surfaces with a resolution inaccessible by conventional optical microscopy. Such a probe is designed for integration into a near-field scanning optical microscope (NSOM) for scanning and collecting...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2002-06, Vol.49 (6), p.986-990
Main Authors: Chelly, R.A., Cohen, Y., Sa'ar, A., Shappir, J.
Format: Article
Language:English
Subjects:
Etching
Micromachining
Photodetectors
Photodiodes
Schottky diodes
Semiconductor device noise
Silicon
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Summary:We present a new type of silicon photodetector with a subwavelength aperture designed to scan material surfaces with a resolution inaccessible by conventional optical microscopy. Such a probe is designed for integration into a near-field scanning optical microscope (NSOM) for scanning and collecting information from the near-field region located at the vicinity of the surface. The photodetector, which was realized by conventional microelectronics technology, is located on top of a 250-/spl mu/m-high pyramid, enabling detection of reflected as well as transmitted light. The light sensitive part of the probe consists of a micromachined silicon structure built using anisotropic etch solutions such as ethylene diamine pyrocatechol (EDP) and KOH. The shape of the probe is a truncated double pyramid with a ring shape top silicon/aluminum Schottky diode surrounding an exposed silicon photosensitive area of about 150 nm in diameter. Typical I-V characteristics and optical response measurements are presented.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2002.1003717