RF Linearity/Non-Linearity FoMs of FDSOI NCFET in presence of interface trap charges

In this work, linearity of 22 nm FDSOI NCFET in presence of oxide-semiconductor interface trap charges has been systematically examined. To simulate the metal-ferroelectric-metal-insulator-semiconductor (MFMIS) type NCFET, a well calibrated TCAD tool has been used. Firstly, the underlying MIS struct...

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Bibliographic Details
Main Authors: Rama Seshu, Vullakula, Raja Shaik, Rameez, Rajakumari, V, Pradhan, K P
Format: Conference Proceeding
Language:English
Subjects:
1D-LK model
Data models
FDSOI
IIP
Intermodulation distortion
Linearity
Logic gates
NCFET
Radio frequency
Silicon-on-insulator
TCAD
Transconductance coefficients
Voltage
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Summary:In this work, linearity of 22 nm FDSOI NCFET in presence of oxide-semiconductor interface trap charges has been systematically examined. To simulate the metal-ferroelectric-metal-insulator-semiconductor (MFMIS) type NCFET, a well calibrated TCAD tool has been used. Firstly, the underlying MIS structure has been constructed and simulated in the TCAD. Subsequently, a 1D - Landau Khalatnikov model (1D-LK) is used to model ferroelectric layer. The linearity and non-linearity figures of merit (FoMs) have been observed for the device. These include coefficients of transconductance (g m1 , g m2 , g m3 ), intermodulation distortion (IM), and input intercept point (IIP) are analysed in detail for various interface trap charge densities.
ISSN:2325-9418
DOI:10.1109/INDICON56171.2022.10040122