The interaction of hot electrons and hot holes on the degradation of P-channel metal oxide semiconductor field effect transistors

• Main Authors: Yang, Z.J., Guarin, F.J., Rauch, S.E.
• Format: Conference Proceeding
• Language: English
• Subjects: Charge carrier processes; Circuits; CMOS technology; Degradation; Electron traps; FETs; Hot carriers; Microelectronics; Stress; Threshold voltage
• DOI: 10.1109/ICCDCS.2002.1004038

The hot carrier degradation mechanisms for P Channel metal-oxide-semiconductor (MOS) field effect transistor (PFET) has been investigated. We have established that the dominant hot carrier degradation mechanism for PFET damage changes depending on stress conditions. The coexistence and interaction of hot electrons and hot holes is reported. At the accelerated stress condition where both hot electrons and hot holes exist, the observed hot carrier degradation exhibits a different behavior from that seen in the case when the hot electrons or hot holes are considered separately. A high defect generation rate is reported at the coexistence conditions. We attribute this behavior to the interaction mechanism between hole electrons and hot holes. The electron traps caused by hot electrons recombine with hot holes and facilitate a higher hole trap generation rate. Contrary to conventional thinking we report that the worst case hot carrier degradation degradation condition is not at high Vg but in the coexistence regime.