PL and CL emissions in thermal oxide and silicon rich oxide films implanted with silicon

In this work, photoluminescence (PL) and cathodoluminescence (CL) of silicon oxide films implanted with silicon were investigated. Thermal oxide and silicon rich oxide obtained by LPCVD films and both implanted with silicon (SITO and SISRO) were studied. The results show that SISRO radiates in the s...

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Bibliographic Details
Main Authors: Flores Gracia, F., Aceves, M., Carrillo, J., Dominguez, C., Falcony, C.
Format: Conference Proceeding
Language:English
Subjects:
Amorphous materials
Annealing
Atmosphere
Luminescence
Optical films
Photoluminescence
Potential well
Semiconductor films
Silicon
Stimulated emission
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Summary:In this work, photoluminescence (PL) and cathodoluminescence (CL) of silicon oxide films implanted with silicon were investigated. Thermal oxide and silicon rich oxide obtained by LPCVD films and both implanted with silicon (SITO and SISRO) were studied. The results show that SISRO radiates in the same wavelength as SITO, but with higher intensity. In addition, it is shown that PL and CL bands are not only related to the Si-excess of the films. The PL of the silicon rich oxide is the highest reported to date. The results show that an optimum annealing time exists to produce the highest luminescence intensity. It is proposed that in these materials, the radiation allowed should be confined between 1.4 and 3 eV.
DOI:10.1109/ICCDCS.2002.1004061