Performance Trade-Off of RFSOI Switches Under Scaled Bias Conditions

Over the years, RFSOI has emerged as dominant technology for building RF FEM modules with optimum cost and performance. RFSOI switches are typically designed using thick gate oxides with biasing up to 3. 3V to deliver minimum RON x COFF. With the strong push of operating digital devices at lower vol...

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Main Authors: Dhar, Siddhartha, Monfray, Stephane, Gianesello, Frederic, Julien, Franck, Dura, Julien, Legrand, Charles-Alex, Amouroux, Julien, Gros, Bernadette, Welter, Loic, Charbuillet, Clement, Cathelin, Philippe, Canderle, Elodie, Vulliet, Nathalie, Escolier, Emmanuel, Antunes, Lucas, Rouchouze, Eric, Fornara, Pascal, Rivero, Christian, Bertrand, Guillaume, Chevalier, Pascal, Regnier, Arnaud, Gloria, Daniel, Fleury, Alain
Format: Conference Proceeding
Language:English
Subjects:
Logic gates
Low voltage operation
Monolithic integrated circuits
Performance evaluation
Personal digital devices
Radio frequency
RF switches
Silicon
SOI
Switches
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Summary:Over the years, RFSOI has emerged as dominant technology for building RF FEM modules with optimum cost and performance. RFSOI switches are typically designed using thick gate oxides with biasing up to 3. 3V to deliver minimum RON x COFF. With the strong push of operating digital devices at lower voltages, it would become necessary to evaluate the performance of the switch under such operating conditions. In this paper, we analyze the impact of RON x COFF of the switch in 200mm RFSOI technology, under scaled bias conditions and propose path for device optimization.
ISSN:2474-9761
DOI:10.1109/SiRF56960.2023.10046146