A 220-294 GHz Power Amplifier with 10-dBm Psat and 2.2% PAE in 250-nm InP DHBT

We designed and fabricated a 300-GHz-band power amplifier (PA) with a wide bandwidth, high output power, and high power-added efficiency (PAE) in in-house 250-nm indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology having an f max of 480 GHz. To obtain high PAE, we inves...

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Bibliographic Details
Main Authors: Jyo, Teruo, Hamada, Hiroshi, Nagatani, Munehiko, Wakita, Hitoshi, Abdo, Ibrahim, Mutoh, Miwa, Shiratori, Yuta, Okada, Kenichi, Shirane, Atsushi, Takahashi, Hiroyuki
Format: Conference Proceeding
Language:English
Subjects:
Bandwidth
combiner
DH-HEMTs
III-V semiconductor materials
InP DHBT
Optimization methods
Power amplifiers
Power combiners
terahertz
Through-silicon vias
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Summary:We designed and fabricated a 300-GHz-band power amplifier (PA) with a wide bandwidth, high output power, and high power-added efficiency (PAE) in in-house 250-nm indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology having an f max of 480 GHz. To obtain high PAE, we investigated an optimization method for designing the PA at an optimum point in the trade-off between the output power and DC power consumption (P DC ). We proposed a low-loss T-junction power combiner with impedance convertors to maximize the output power and the PAE. Furthermore, we used dense through substrate vias (TSVs) to stabilize the ground and to suppress the oscillation to ensure a high gain and high PAE. The fabricated PA achieved a -3 dB bandwidth of 74 GHz from 220 GHz to 294 GHz, saturation power (P sat ) of 10.6 dBm, and PAE of 2.24%.
ISSN:2831-4999
DOI:10.1109/BCICTS53451.2022.10051755