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Fully Integrated Back-Biased 3d Hall Sensor with Wafer-Level Integrated Permanent Micromagnets

This paper reports on a 3D Hall sensor back-biased by rare-earth micromagnets which are integrated directly into the silicon substrate using a wafer-level fabrication process, called PowderMEMS. For the first time, the technique is used to realize a fully integrated back-biased magnetic field sensor...

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Bibliographic Details
Main Authors: Gojdka, Bjorn, Cichon, Daniel, Stahl-Offergeld, Markus, Schroder, Dominik, Clausen, Niels, Hedayat, Christian, Hohe, Hans-Peter, Lisec, Thomas
Format: Conference Proceeding
Language:English
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Summary:This paper reports on a 3D Hall sensor back-biased by rare-earth micromagnets which are integrated directly into the silicon substrate using a wafer-level fabrication process, called PowderMEMS. For the first time, the technique is used to realize a fully integrated back-biased magnetic field sensor. The feasibility of the approach is proven by measurements of the motion of a rotating gear wheel which represents a typical back bias application. Additionally, the ability of the approach to create optimal magnetic field geometries for magnetically biased sensors is demonstrated.
ISSN:2160-1968
DOI:10.1109/MEMS49605.2023.10052184