Short- and Long-term Memory Based on a Floating-Gate IGZO Synaptic Transistor

Short- and long-term neuroplasticity behaviors are key mechanisms for various activities. In this paper, we propose a synaptic transistor with a floating-gate (FG) node and an amorphous InGaZnO (IGZO) channel layer. The proposed device emulates the neuroplasticity functions of both short-term memory...

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Bibliographic Details
Published in:IEEE access 2023-01, Vol.11, p.1-1
Main Authors: Kang, Dongyeon, Kim, Wonjung, Jang, Jun Tae, Kim, Changwook, Kim, Jung Nam, Choi, Sung-Jin, Bae, Jong-Ho, Kim, Dong Myong, Kim, Yoon, Kim, Dae Hwan
Format: Article
Language:English
Subjects:
Amplitudes
Depression
IGZO
Indium gallium zinc oxide
Logic gates
long-term memory
neuromorphic system
Neuromorphics
Nonvolatile memory
Semiconductor devices
short-term memory
Synapse device
Synaptic communication
synaptic transistor
Threshold voltage
Transistors
Tunneling
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Summary:Short- and long-term neuroplasticity behaviors are key mechanisms for various activities. In this paper, we propose a synaptic transistor with a floating-gate (FG) node and an amorphous InGaZnO (IGZO) channel layer. The proposed device emulates the neuroplasticity functions of both short-term memory (STM) and long-term memory (LTM) through the control of the amplitude and the number of input pulses. The STM operated by ion movement in the gate dielectrics occurs when the input amplitude is relatively small (10 V). In addition, as the number of input pulses increases, information is stored for a longer time. Our FG IGZO synaptic transistor could be a promising device solution for brain-inspired computing systems.
ISSN:2169-3536
2169-3536
DOI:10.1109/ACCESS.2023.3249479