A Reconfigurable RF Filter with 1-40% Fractional Bandwidth for 5G FR1 Receivers

This paper presents a radio frequency front-end (RFFE) for 5G New Radio (NR) receivers operating in Frequency Range 1 (FR1). The core of this RFFE is a synthetic fourth-order Q-enhanced RF filter employing gm-boosting, noise-cancelling, capacitive cross-coupling, and forward body-biasing techniques...

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Bibliographic Details
Published in:IEEE solid-state circuits letters 2023-01, Vol.6, p.1-1
Main Authors: Ghotbi, Iman, Behmanesh, Baktash, Tormanen, Markus
Format: Article
Language:English
Subjects:
5G mobile communication
5G New Radio (NR)
Amplification
Amplifiers
Bandwidth
Bandwidths
body biasing
Cross coupling
Electrical Engineering, Electronic Engineering, Information Engineering
Elektroteknik och elektronik
Engineering and Technology
FD-SOI
Filter
Frequency ranges
fully depleted silicon on insulator (FD-SOI)
Gain
gm-boosting
noise canceling
noise cancelling
Noise measurement
Passband
Q-enhanced
Radio
Radio frequency
Receivers
Receivers & amplifiers
Resonator filters
Resonators
Signal Processing
Signalbehandling
sub-6-GHz
Teknik
Transconductance
Voltage gain
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Summary:This paper presents a radio frequency front-end (RFFE) for 5G New Radio (NR) receivers operating in Frequency Range 1 (FR1). The core of this RFFE is a synthetic fourth-order Q-enhanced RF filter employing gm-boosting, noise-cancelling, capacitive cross-coupling, and forward body-biasing techniques to achieve 1.7 GHz to 6.4 GHz operating range and 1 adjustable fractional bandwidth (FBW). The function of the filter is based on subtracting out-of-phase signals in the passband and in-phase signals in the stopband. Two Q-enhanced LC resonators are utilized for outphasing. The filter is preceded by a low-noise transconductance amplifier, and it is followed by a programmable gain amplifier and a differential buffer stage for the measurement purposes and gain equalization. The experimental results demonstrate that the voltage gain is tunable between 18 and 47 dB with 0.2 dB steps, which leads to an equalized output power in all the filter configurations. Fabricated in 22 nm Fully Depleted Silicon on Insulator (FD-SOI) technology, the RFFE achieves 4.6 dB NF, -14 dBm IB-IIP3, and 26 dBm IB-IIP2 at 4 GHz. Notably, the fourth-order steep roll-off provides 22 dBm OOB-IIP3 at 2WBW frequency offset. The entire RFFE draws 22-45 mA from a 1 V supply and the filter core occupies 0.11 mm2 chip area.
ISSN:2573-9603
2573-9603
DOI:10.1109/LSSC.2023.3265208