New Extraction Method for Intrinsic Qrr of Power MOSFETs

We provide the method to estimate intrinsic Q rr (Q_{r_{-}\text{int}}) without parasitic inductance in the measurement system for the first time. In this paper, we analyze parasitic inductance dependence of Q rr by TCAD simulation and we propose the method for removing the parasitic inductance effec...

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Bibliographic Details
Main Authors: Hara, T., Nakajima, S., Ohguro, T., Miyashita, K.
Format: Conference Proceeding
Language:English
Subjects:
Analytical models
Diode
Discharges (electric)
Inductance
Microelectronics
MOSFET
Parasitic Inductance
Power measurement
Power MOSFET
Qoss
Qrr
Reverse Recovery
Time measurement
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Summary:We provide the method to estimate intrinsic Q rr (Q_{r_{-}\text{int}}) without parasitic inductance in the measurement system for the first time. In this paper, we analyze parasitic inductance dependence of Q rr by TCAD simulation and we propose the method for removing the parasitic inductance effect as well as calculating the carrier of recombination and discharge (qr_into).
ISSN:2158-1029
DOI:10.1109/ICMTS55420.2023.10094069