Discrete current limiting circuit for emerging memory programming

This work presents a novel, discrete-component circuit for the electrical characterisation of Resistive Random Access Memory (RRAM). The forming of State-Of-The-Art RRAM cell in one resistor (1R) configuration is demonstrated, enabling the possibility of sparing the commonly integrated series transi...

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Bibliographic Details
Main Authors: Laborie, Lao, Trotti, Paola, Veyret, Killian, Cagli, Carlo
Format: Conference Proceeding
Language:English
Subjects:
Computer architecture
current overshoot
DCL
discrete current limiting circuit
Limiting
memory programming
Microprocessors
Modulation
parasitic capacitance
Programming
Resistive RAM
Resistors
RRAM
test structure
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Summary:This work presents a novel, discrete-component circuit for the electrical characterisation of Resistive Random Access Memory (RRAM). The forming of State-Of-The-Art RRAM cell in one resistor (1R) configuration is demonstrated, enabling the possibility of sparing the commonly integrated series transistor. The presented DCL circuit is furthermore benchmarked versus other discrete and integrated typologies, showing dramatic improvement over existing discrete solutions, and comparable performances with integrated architectures. Finally, multi-bit storage is experimentally demonstrated through modulation of the programming current amplitude.
ISSN:2158-1029
DOI:10.1109/ICMTS55420.2023.10094099