Distributed field plate effects in split-gate trench MOSFETs

Fast electric transients can cause distributed effects inside trench MOSFETs possibly resulting in device failure. A new test structure to study those distributed effects, combined with a new Transmission-Line Pulse (TLP) setup, is presented. On-wafer TLP measurements are performed and combined with...

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Bibliographic Details
Main Authors: Tambone, R., Ferrara, A., Magrini, F., Hoffmann, A., Wood, A., Noebauer, G., Gondro, E., Hueting, R.J.E.
Format: Conference Proceeding
Language:English
Subjects:
Distributed effects
Field plate
MOSFET
Predictive models
Semiconductor device modeling
Simulation
Solid modeling
Split gate flash memory cells
Split-gate
TCAD
Test structure
TLP
Transmission lines
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Description
Summary:Fast electric transients can cause distributed effects inside trench MOSFETs possibly resulting in device failure. A new test structure to study those distributed effects, combined with a new Transmission-Line Pulse (TLP) setup, is presented. On-wafer TLP measurements are performed and combined with TCAD and SPICE simulations to predict the space and time evolution of the field plate potential during transients.
ISSN:2158-1029
DOI:10.1109/ICMTS55420.2023.10094167