Stability, Reliability, and Robustness of GaN Power Devices: A Review

Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, the material composition, architecture and physics of many GaN devices are significantly different from silicon and silicon carbide devices. These distinctions result...

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Bibliographic Details
Published in:IEEE transactions on power electronics 2023-07, Vol.38 (7), p.1-31
Main Authors: Kozak, Joseph P., Zhang, Ruizhe, Porter, Matthew, Song, Qihao, Liu, Jingcun, Wang, Bixuan, Wang, Rudy, Saito, Wataru, Zhang, Yuhao
Format: Article
Language:English
Subjects:
Cryogenic properties
Cryogenic temperature
Dynamic stability
Electronic devices
Electronics
failure analysis
Form factors
Gallium nitride
Gallium nitrides
HEMTs
high electron mobility transistors
JFETs
MODFETs
MOSFETs
Power electronics
power semiconductor devices
radiation
Reliability
Robustness
Ruggedness
Short circuits
Silicon carbide
stability
Switching
Thermal stability
Threshold voltage
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Summary:Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, the material composition, architecture and physics of many GaN devices are significantly different from silicon and silicon carbide devices. These distinctions result in many unique stability, reliability and robustness issues facing GaN power devices. This paper reviews the current understanding of these issues, particularly those related to dynamic switching, and their impacts on system performance. Instead of delving into reliability physics, this paper intends to provide power electronics engineers the necessary information for deploying GaN devices in existing and emerging applications, as well as provide references for the qualification evaluations of GaN power devices. The issues covered in this paper include the dynamic instability of device parameters (e.g., on-resistance, threshold voltage, output capacitance), the device robustness in avalanche, overvoltage and short-circuit conditions, the device's switching reliability and lifetime, as well as the device's ruggedness under radiation and extreme (cryogenic and elevated) temperatures. Knowledge gaps and immediate research opportunities in the relevant fields are also discussed.
ISSN:0885-8993
1941-0107
DOI:10.1109/TPEL.2023.3266365