Stability, Reliability, and Robustness of GaN Power Devices: A Review

• Published in: IEEE transactions on power electronics 2023-07, Vol.38 (7), p.1-31
• Main Authors: Kozak, Joseph P., Zhang, Ruizhe, Porter, Matthew, Song, Qihao, Liu, Jingcun, Wang, Bixuan, Wang, Rudy, Saito, Wataru, Zhang, Yuhao
• Format: Article
• Language: English
• Subjects: Cryogenic properties; Cryogenic temperature; Dynamic stability; Electronic devices; Electronics; failure analysis; Form factors; Gallium nitride; Gallium nitrides; HEMTs; high electron mobility transistors; JFETs; MODFETs; MOSFETs; Power electronics; power semiconductor devices; radiation; Reliability; Robustness; Ruggedness; Short circuits; Silicon carbide; stability; Switching; Thermal stability; Threshold voltage
• ISSN: 0885-8993; 1941-0107
• DOI: 10.1109/TPEL.2023.3266365

Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, the material composition, architecture and physics of many GaN devices are significantly different from silicon and silicon carbide devices. These distinctions result in many unique stability, reliability and robustness issues facing GaN power devices. This paper reviews the current understanding of these issues, particularly those related to dynamic switching, and their impacts on system performance. Instead of delving into reliability physics, this paper intends to provide power electronics engineers the necessary information for deploying GaN devices in existing and emerging applications, as well as provide references for the qualification evaluations of GaN power devices. The issues covered in this paper include the dynamic instability of device parameters (e.g., on-resistance, threshold voltage, output capacitance), the device robustness in avalanche, overvoltage and short-circuit conditions, the device's switching reliability and lifetime, as well as the device's ruggedness under radiation and extreme (cryogenic and elevated) temperatures. Knowledge gaps and immediate research opportunities in the relevant fields are also discussed.