GaN/AlGaN Solid-State Traveling-Wave Amplifier (SSTWA) Operating at W -Band

In this work, we report on the first experimental demonstration of a solid-state traveling-wave amplifier (SSTWA) based on a GaN/AlGaN superlattice heterostructure. The device employs a coplanar waveguide loaded with interdigitated electrodes that couple the RF wave to the drifting electrons confine...

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Bibliographic Details
Published in:IEEE microwave and wireless technology letters (Print) 2023-07, Vol.33 (7), p.1-4
Main Authors: Anastasiadis, Michail O., Akhiyat, Abe A., Grisafe, Benjamin, Pavlidis, Dimitris, Volakis, John L.
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Amplification
Coplanar waveguides
Electrodes
Electron gas
Electron mobility
Electrons
Gain
Gallium nitrides
Harmonic analysis
Heterostructures
mm-Wave amplifiers
MODFETs
plasma-wave devices
Room temperature
Semiconductor device measurement
Solid state
Superlattices
Temperature measurement
Traveling wave amplifiers
Traveling waves
traveling-wave solid-state amplifiers
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Summary:In this work, we report on the first experimental demonstration of a solid-state traveling-wave amplifier (SSTWA) based on a GaN/AlGaN superlattice heterostructure. The device employs a coplanar waveguide loaded with interdigitated electrodes that couple the RF wave to the drifting electrons confined in a 2-D electron gas (2-DEG). The amplifier is designed and validated with electromagnetic (EM) simulations to demonstrate amplification at W -band and under room temperature. Two-port measurements of the fabricated traveling-wave device revealed an electronic gain of \sim 22 dB/mm at 80 GHz for an 8.3- \mu m-long channel.
ISSN:2771-957X
2771-9588
DOI:10.1109/LMWT.2023.3265353