High-Performance Acoustic Wave Devices on LiTaO /SiC Hetero-Substrates

We present high-performance shear horizontal surface acoustic wave (SH-SAW) and longitudinal leaky SAW (LL-SAW) devices using lithium tantalate (LiTaO _{3}) thin films on silicon carbide (SiC) substrate. The 4-in LiTaO _{3} -on-SiC (LTOSiC) hetero-substrate was prepared by an ion-slicing process. I...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2023-04, p.1-11
Main Authors: Zhang, Liping, Zhang, Shibin, Wu, Jinbo, Zheng, Pengcheng, Zhou, Hongyan, Yao, Hulin, Li, Zhongxu, Huang, Kai, Sun, Huarui, Ou, Xin
Format: Article
Language:English
Subjects:
Acoustics
Lithium tantalate-on-silicon carbide (LTOSiC)
piezoelectric heterogeneous substrate
quality factor (<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> Q)</tex-math> </inline-formula>
Resonant frequency
Resonator filters
Resonators
RF acoustic devices
Silicon
Silicon carbide
Substrates
temperature coefficient of frequency (TCF)
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Summary:We present high-performance shear horizontal surface acoustic wave (SH-SAW) and longitudinal leaky SAW (LL-SAW) devices using lithium tantalate (LiTaO _{3}) thin films on silicon carbide (SiC) substrate. The 4-in LiTaO _{3} -on-SiC (LTOSiC) hetero-substrate was prepared by an ion-slicing process. Instead of the Si-based piezo-on-insulator substrates, generally embedded with functional dielectric layers (e.g., SiO _{2}) , LTOSiC with a simple structure has achieved exciting results on device frequency, quality factor ( Q) , temperature coefficient of frequency (TCF), and thermal transport properties. The demonstrated resonators show the scalable resonances of 1.19-4.91 GHz, in which the gigahertz SH-SAW resonator exhibits an ultrahigh Bode- Q of 8100 and an excellent TCF of - 4.3 ppm/K, while the LL-SAW resonator presents a high Bode- Q of 1000 and an improved TCF of - 25.4 ppm/K at 5.0 GHz. Besides, the demonstrated filters show the center frequencies ( f_c) of 2.74-4.26 GHz, the insertion loss (IL) below 1.26 dB, and an out-of-band (OoB) rejection of 10-45 dB. The SH-SAW-based filter shows a f_c of 3.36 GHz, an IL of 0.78 dB, and a 3-dB bandwidth of 180 MHz, while the LL-SAW-based filter shows a f_c of 3.85 GHz and an IL of 0.85 dB. Overall, LTOSiC may serve as an advanced material platform of acoustic devices for 5G-frequency range 1 (5G-FR1) bands.
ISSN:0018-9480
DOI:10.1109/TMTT.2023.3267556