Smoothing gate capacitance models for CMOS radio frequency and microwave integrated circuits CAD

Convergence problems for both voltage- and charge-controlled models of MOSFET gate capacitances are often a limiting factor of CAD tools. An idea for exponential smoothing of model discontinuities is proposed. The method is demonstrated by smoothing the discontinuity of Meyer's model at zero dr...

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Bibliographic Details
Main Author: Dobes, J.
Format: Conference Proceeding
Language:English
Subjects:
Capacitance
CMOS integrated circuits
Flip-flops
Integrated circuit modeling
Microwave integrated circuits
Radio frequency
Radiofrequency integrated circuits
Semiconductor device modeling
Smoothing methods
Voltage
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Description
Summary:Convergence problems for both voltage- and charge-controlled models of MOSFET gate capacitances are often a limiting factor of CAD tools. An idea for exponential smoothing of model discontinuities is proposed. The method is demonstrated by smoothing the discontinuity of Meyer's model at zero drain-source voltage. The updated model is tested on a flip-flop circuit by an advanced algorithm.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2002.1011693