Write-error-rate of Spin-Transfer-Torque MRAM (Invited)

Embedded Spin-Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) is now a standard foundry offering for embedded non-volatile memory applications at the 28 nm node and below, where it replaces embedded Flash, due to lower development costs. The switch from in-plane to perpendicularly m...

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Bibliographic Details
Main Author: Worledge, Daniel C.
Format: Conference Proceeding
Language:English
Subjects:
Foundries
Magnetic materials
Materials reliability
MRAM
Nonvolatile memory
Random access memory
spin-transfer torque
STT-MRAM
Switches
Torque
write-error-rate
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Description
Summary:Embedded Spin-Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) is now a standard foundry offering for embedded non-volatile memory applications at the 28 nm node and below, where it replaces embedded Flash, due to lower development costs. The switch from in-plane to perpendicularly magnetized magnetic materials enabled reliable operation and a scaling path. Write-error-rate is the key reliability challenge for STT-MRAM. While due to fundamental physics, write-error-rate of STT-MRAM can be engineered to meet even aggressive product specifications.
ISSN:1938-1891
DOI:10.1109/IRPS48203.2023.10117666