Thermomigration-induced void formation in Cu-interconnects - Assessment of main physical parameters

Using a dedicated test structure, the main physical parameters of void formation due to thermomigration (TM) were assessed. Based on physical and electrical void-analyses, we experimentally determined the time to void nucleation and estimated the heat of transport parameter Q^{\ast}= 0.21 eV for Cu...

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Bibliographic Details
Main Authors: Ding, Y., Pedreira, O. Varela, Lofrano, M., Zahedmanesh, H., Chavez, T., Farr, H., De Wolf, I., Croes, K.
Format: Conference Proceeding
Language:English
Subjects:
Cu interconnect
Failure analysis
Grain boundaries
Metals
Reliability
Resistance
Thermal analysis
Thermal expansion
Thermal gradient
Thermal stresses
Thermomigration
Void formation
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Summary:Using a dedicated test structure, the main physical parameters of void formation due to thermomigration (TM) were assessed. Based on physical and electrical void-analyses, we experimentally determined the time to void nucleation and estimated the heat of transport parameter Q^{\ast}= 0.21 eV for Cu interconnects with CD~1µm, Our studies show that TM has a 6x higher contribution to metal flux compared to the initial stress migration (SM) induced by the coefficient of thermal expansion (CTE) mismatch.
ISSN:1938-1891
DOI:10.1109/IRPS48203.2023.10117870