Current Gain Reduction in Bipolar Junction Transistors Induced by Carbon Contamination from H3PO4-Based Etchant

A new mechanism contributed to current gain reduction in Bipolar Junction Transistors that was caused by contamination of H 3 PO 4 during silicon nitride removal has been investigated via various physical analysis and electrical characterization. Based on energy-dispersive X-ray spectroscopy/transmi...

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Bibliographic Details
Main Authors: Lik, Tan Chan, Ning, Lim Chui, Wai, Wan Tatt, Johan, Norjuliani, Zakaria, Zafirah, Cheong, Kuan Yew
Format: Conference Proceeding
Language:English
Subjects:
BJT
Carbide
Etching
Phosphoric acid
Photoelectron microscopy
Semiconductor device manufacture
Silicon
Silicon nitride
Spectroscopy
TEM
Transistors
XPS
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Summary:A new mechanism contributed to current gain reduction in Bipolar Junction Transistors that was caused by contamination of H 3 PO 4 during silicon nitride removal has been investigated via various physical analysis and electrical characterization. Based on energy-dispersive X-ray spectroscopy/transmission electron microscopy and X-ray photoelectron spectroscopy results, carbon and carbide related compounds can be detected in the bulk silicon nitride. This may be the possible root cause of low current gain in the transistors.
ISSN:2376-6697
DOI:10.1109/ASMC57536.2023.10121127