Sampling circuit on silicon substrate for frequencies beyond 50 GHz

We have fabricated and measured a sampling circuit on high resistivity silicon substrate. The circuit incorporates a nonlinear transmission line to provide the sampling pulses. The sampling circuit was measured up to 50 GHz, with a voltage conversion loss lower than 11 dB and varying in this range b...

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Bibliographic Details
Main Authors: Abele, P., Birk, M., Behammer, D., Kibbel, H., Trasser, A., Maier, P., Schad, K.-B., Sonmez, E., Schumacher, H.
Format: Conference Proceeding
Language:English
Subjects:
Circuit testing
Distributed parameter circuits
Frequency
Gallium arsenide
Pulse circuits
Sampling methods
Schottky diodes
Silicon
Substrates
Voltage
Online Access:Request full text
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Description
Summary:We have fabricated and measured a sampling circuit on high resistivity silicon substrate. The circuit incorporates a nonlinear transmission line to provide the sampling pulses. The sampling circuit was measured up to 50 GHz, with a voltage conversion loss lower than 11 dB and varying in this range by just 2.3 dB. This is the first presentation of a sampling circuit on silicon substrate with a corner frequency beyond 50 GHz.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2002.1012182