Sampling circuit on silicon substrate for frequencies beyond 50 GHz

We have fabricated and measured a sampling circuit on high resistivity silicon substrate. The circuit incorporates a nonlinear transmission line to provide the sampling pulses. The sampling circuit was measured up to 50 GHz, with a voltage conversion loss lower than 11 dB and varying in this range b...

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Main Authors: Abele, P., Birk, M., Behammer, D., Kibbel, H., Trasser, A., Maier, P., Schad, K.-B., Sonmez, E., Schumacher, H.
Format: Conference Proceeding
Language:English
Subjects:
Circuit testing
Distributed parameter circuits
Frequency
Gallium arsenide
Pulse circuits
Sampling methods
Schottky diodes
Silicon
Substrates
Voltage
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container_end_page 1684 vol.3
container_issue
container_start_page 1681
container_title
container_volume 3
creator Abele, P.
Birk, M.
Behammer, D.
Kibbel, H.
Trasser, A.
Maier, P.
Schad, K.-B.
Sonmez, E.
Schumacher, H.
description We have fabricated and measured a sampling circuit on high resistivity silicon substrate. The circuit incorporates a nonlinear transmission line to provide the sampling pulses. The sampling circuit was measured up to 50 GHz, with a voltage conversion loss lower than 11 dB and varying in this range by just 2.3 dB. This is the first presentation of a sampling circuit on silicon substrate with a corner frequency beyond 50 GHz.
doi_str_mv 10.1109/MWSYM.2002.1012182
format conference_proceeding
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identifier ISSN: 0149-645X
ispartof 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278), 2002, Vol.3, p.1681-1684 vol.3
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2576-7216
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Circuit testing
Distributed parameter circuits
Frequency
Gallium arsenide
Pulse circuits
Sampling methods
Schottky diodes
Silicon
Substrates
Voltage
title Sampling circuit on silicon substrate for frequencies beyond 50 GHz
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