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Time-Resolved Extraction of Negatively Shifted Threshold Voltage in Schottky-Type p-GaN Gate HEMT Biased at High \textit

In this study, a time-resolved extraction method is developed to investigate the threshold voltage ( \textit{V}_{\text{th}}\text{)} of a Schottky-type p-GaN gate high electron mobility transistor (HEMT) biased at high \textit{V}_{\text{DS}} . A testing platform is built which applies a triangular...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2023-05, p.1-6
Main Authors: Nuo, Muqin, Wu, Yanlin, Yang, Junjie, Hao, Yilong, Wang, Maojun, Wei, Jin
Format: Article
Language:English
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Summary:In this study, a time-resolved extraction method is developed to investigate the threshold voltage ( \textit{V}_{\text{th}}\text{)} of a Schottky-type p-GaN gate high electron mobility transistor (HEMT) biased at high \textit{V}_{\text{DS}} . A testing platform is built which applies a triangular waveform to the gate of the transistor and extracts \textit{V}_{\text{th}} when the drain current equals 10 mA. \textit{V}_{\text{th}} of the device is biased at up to 370 V is presented. Being biased at a higher \textit{V}_{\text{DS}} , \textit{V}_{\text{th}} drops by more than 0.5 V for \textit{V}_{\text{DS}} beyond \sim 50 V. The negative shift of \textit{V}_{\text{th}} at high \textit{V}_{\text{DS}} is a result of the elevated potential of the floating p-GaN layer, which is caused by the capacitive coupling between the drain and the p-GaN layer. As a comparison, the ohmic-type p-GaN gate HEMT and the Si superjunction MOSFET (SJ-MOSFET) exhibit negligible \textit{V}_{\text{th}} shifts. The negative \textit{V}_{\text{th}} shift partially recovers during the recorded time of 2000 s due to the leakage current through the gate/ p-GaN Schottky contact. A higher ambient temperature increases the leakage current, and the recovery is observed quicker. This work provides an effective approach to survey the time-resolved \textit{V}_{\text{th}} evolution of Schottky-type p-GaN gate HEMT biased at high \textit{V}_{\text{DS}} and serves as a guidance for the reliability desig
ISSN:0018-9383
DOI:10.1109/TED.2023.3276731