Low-Voltage Solution-Processed CuBr } I \text\text} Thin-Film Transistors With NAND Logic Function

In this brief, the solution-processed CuBr _{\text{X}} I _{\text{1}\text{-}\text{X}} thin-film transistors (TFTs) are successfully prepared by doping Br in CuI at low temperature (80 ^{\circ} C). By adjusting the doping concentration of Br, the \vphantom{_{\int}} optimized CuBr _{\text{0}.\text{2...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2023-05, p.1-4
Main Authors: Hou, Wei, Dou, Wei, Lei, Liuhui, Yuan, Xing, Gan, Xiaomin, Yang, Jia, Chen, Diandian, Tang, Dongsheng
Format: Article
Language:English
Subjects:
Capacitance
CuBr<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> _{\text{X}}</tex-math> </inline-formula>I<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> _{\text{1}\text{-}{\textit{X}}}</tex-math> </inline-formula>
Diffraction
Doping
electric-double-layer (EDL) effect
Logic functions
Logic gates
NAND logic function
Thin film transistors
thin-film transistors (TFTs)
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Description
Summary:In this brief, the solution-processed CuBr _{\text{X}} I _{\text{1}\text{-}\text{X}} thin-film transistors (TFTs) are successfully prepared by doping Br in CuI at low temperature (80 ^{\circ} C). By adjusting the doping concentration of Br, the \vphantom{_{\int}} optimized CuBr _{\text{0}.\text{2}} I _{\text{0}.\text{8}} TFTs exhibited a field-effect mobility of 0.39 cm ^{\text{2}} \cdot V ^{-\text{1}} \cdot s ^{-\text{1}} , a large ON/OFF current ratio of 1.2 \times 10 ^{\text{4}} , and a subthreshold swing of 64 mV/decade. The operating voltage of the TFTs is below 2 V, the dynamic stress test shows that the device has good stability, and the electrical performance and stability are much better than undoped CuI TFTs. Meanwhile, the NAND logic function is successfully implemented by this device, which can be applied to the future fabrication of large-scale logic circuits and microelectronic devices.
ISSN:0018-9383
DOI:10.1109/TED.2023.3278616