Direct Band Gap Ge0.85Sn0.15 Photodiodes for Room Temperature Gas Sensing

Ge 0.85 Sn 0.15 -based stacks were grown by reduced pressure chemical vapor deposition on 200 mm Si wafers. The resulting photodiodes showed detectivities above 10 8 cm.H z 1/2 .W −1 at 1.55 µm and a cutoff wavelength of 3.5 µm. This detection range opens up promising perspectives for future all-gro...

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Bibliographic Details
Main Authors: Cardoux, C., Casiez, L., Frauenrath, M., Pauc, N., Calvo, V., Hartmann, J.M., Coudurier, N., Rodriguez, P., Grosse, P., Constancias, C., Lartigue, O., Barritault, P., Gravrand, O., Chelnokov, A., Reboud, V.
Format: Conference Proceeding
Language:English
Subjects:
Fourier transform infrared spectroscopy
germanium-tin
group-IV
photodetector
photodiode
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Summary:Ge 0.85 Sn 0.15 -based stacks were grown by reduced pressure chemical vapor deposition on 200 mm Si wafers. The resulting photodiodes showed detectivities above 10 8 cm.H z 1/2 .W −1 at 1.55 µm and a cutoff wavelength of 3.5 µm. This detection range opens up promising perspectives for future all-group-IV gas sensors.
ISSN:1949-209X
DOI:10.1109/SiPhotonics55903.2023.10141903