Review: Numerical Simulations of Semiconductor Piezoresistance for Computer-Aided Designs

The field of piezoresistance has mainly advanced through experimental research; however, the improved accuracy of simulations and the emergence of new materials have increased the importance of simulations in this field. This review discusses the methods and current topics related to simulations of...

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Bibliographic Details
Published in:IEEE journal of the Electron Devices Society 2023-01, Vol.11, p.1-1
Main Authors: Sugiura, Takaya, Matsuda, Kazunori, Nakano, Nobuhiko
Format: Article
Language:English
Subjects:
CAD
Computational modeling
Computer aided design
First principles
Mathematical models
Nanowires
Photonic band gap
Piezoresistance
Piezoresistive devices
Piezoresistivity
Semiconductor piezoresistance
Silicon
Silicon carbide
Simulation
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Summary:The field of piezoresistance has mainly advanced through experimental research; however, the improved accuracy of simulations and the emergence of new materials have increased the importance of simulations in this field. This review discusses the methods and current topics related to simulations of piezoresistive devices. Advancing simulation modeling will facilitate the computer-aided design of piezoresistive devices, and this review introduces the means of establishing these models by discussing the current studies on simulations and calculations in this field. Two simulation methods currently exist namely, device simulations and first-principles theoretical analysis. This review focuses on numerical simulation approaches for modeling of the piezoresistive effect using the multiphysics simulations of the mechanical and electrical behaviors of piezoresistive materials.
ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2023.3281866