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Negative transconductance in trench-type InGaAs/InAlAs quantum wire FET

The effects of negative differential resistance (NDR) and negative transconductance are observed in an InGaAs/InAlAs (25/sup w//spl times/10/sup t/ nm) quantum wire (QWR)-field effect transistor (FET) that is fabricated with a trench-type QWR grown on a (311)A V-groove patterned InP substrate by mol...

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Main Authors:	Kee-Youn Jang, Sugaya, T., Heol-Koo Hahn, Shinoda, A., Yonei, K., Ogura, M., Komori, K.
Format:	Conference Proceeding
Language:	English
Subjects:	FETs Fluctuations Indium compounds Indium gallium arsenide Indium phosphide Molecular beam epitaxial growth Substrates Temperature Transconductance Wire
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creator	Kee-Youn Jang Sugaya, T. Heol-Koo Hahn Shinoda, A. Yonei, K. Ogura, M. Komori, K.
description	The effects of negative differential resistance (NDR) and negative transconductance are observed in an InGaAs/InAlAs (25/sup w//spl times/10/sup t/ nm) quantum wire (QWR)-field effect transistor (FET) that is fabricated with a trench-type QWR grown on a (311)A V-groove patterned InP substrate by molecular beam epitaxy (MBE). The quantized conductance fluctuations are clearly observed at the relatively high temperature of 24 K, which indicates a high quality QWR is realized by our novel trench type epitaxial growth method. The quantized conductance result can be explained by the energy sub-level related resonant tunneling like phenomenon between one-dimensional states of the QWR and the two-dimensional states of the reservoir. Especially, the negative transconductance characteristics are observed at 6 K.
doi_str_mv	10.1109/ICIPRM.2002.1014495
format	conference_proceeding
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identifier	ISSN: 1092-8669
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language	eng
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source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	FETs Fluctuations Indium compounds Indium gallium arsenide Indium phosphide Molecular beam epitaxial growth Substrates Temperature Transconductance Wire
title	Negative transconductance in trench-type InGaAs/InAlAs quantum wire FET
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