Improved p-doping profiles in lasers and modulators

Zn diffusion during MOCVD growth is studied in a series of different structures using SIMS analysis. A first experiment supports a concentration dependent diffusion rate, and a +1 charge on the Zn interstitial. The Zn diffusion front is found to be quite sharp, and this is used advantageously in com...

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Bibliographic Details
Main Authors: Haysom, J.E., Glew, R., Blaauw, C., Driad, R., MacQuistan, D., Hampel, C.A., Greenspan, J., Bryskiewicz, T.
Format: Conference Proceeding
Language:English
Subjects:
Doping
Equations
Indium gallium arsenide
Indium phosphide
Intelligent networks
MOCVD
Optical device fabrication
Optical devices
PIN photodiodes
Zinc
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Summary:Zn diffusion during MOCVD growth is studied in a series of different structures using SIMS analysis. A first experiment supports a concentration dependent diffusion rate, and a +1 charge on the Zn interstitial. The Zn diffusion front is found to be quite sharp, and this is used advantageously in combination with an undoped spacer layer in a p-i-n structure. Further experiment explores the effect of p+ InGaAs caps (both C and Zn doped) on the diffusion in underlying p to undoped (p-i) interfaces, and find that there is minimal impact.
ISSN:1092-8669
DOI:10.1109/ICIPRM.2002.1014507