Spice compatible electrothermal model of a built-in VDMOSFET diode

An electrothermal model was developed for the built-in VDMOSFET diode. This model calculates the static and dynamic characteristics of the diode by taking into account the heating effect due to the diode's own losses and those of the VDMOSFET. The model's parameters were calculated from th...

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Bibliographic Details
Main Authors: Sunde, V., Butkovic, Z., Bencic, Z.
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Cooling
Diodes
Electronics
Electrothermal effects
Exact sciences and technology
Impedance
Light emitting diodes
Nonlinear equations
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
SPICE
Temperature dependence
Thermal resistance
Transistors
Voltage
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Description
Summary:An electrothermal model was developed for the built-in VDMOSFET diode. This model calculates the static and dynamic characteristics of the diode by taking into account the heating effect due to the diode's own losses and those of the VDMOSFET. The model's parameters were calculated from the catalog data, known relations from literature and the curve of the measured transient thermal impedance for constant current. The accuracy of the model in a simulation of the temperature dependence of the forward characteristic and the time course of silicon temperature was checked with a MEDICI two-dimensional device simulator.
DOI:10.1109/MELECON.2002.1014528