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Spice compatible electrothermal model of a built-in VDMOSFET diode
An electrothermal model was developed for the built-in VDMOSFET diode. This model calculates the static and dynamic characteristics of the diode by taking into account the heating effect due to the diode's own losses and those of the VDMOSFET. The model's parameters were calculated from th...
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creator | Sunde, V. Butkovic, Z. Bencic, Z. |
description | An electrothermal model was developed for the built-in VDMOSFET diode. This model calculates the static and dynamic characteristics of the diode by taking into account the heating effect due to the diode's own losses and those of the VDMOSFET. The model's parameters were calculated from the catalog data, known relations from literature and the curve of the measured transient thermal impedance for constant current. The accuracy of the model in a simulation of the temperature dependence of the forward characteristic and the time course of silicon temperature was checked with a MEDICI two-dimensional device simulator. |
doi_str_mv | 10.1109/MELECON.2002.1014528 |
format | conference_proceeding |
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This model calculates the static and dynamic characteristics of the diode by taking into account the heating effect due to the diode's own losses and those of the VDMOSFET. The model's parameters were calculated from the catalog data, known relations from literature and the curve of the measured transient thermal impedance for constant current. The accuracy of the model in a simulation of the temperature dependence of the forward characteristic and the time course of silicon temperature was checked with a MEDICI two-dimensional device simulator.</description><identifier>ISBN: 0780375270</identifier><identifier>ISBN: 9780780375277</identifier><identifier>DOI: 10.1109/MELECON.2002.1014528</identifier><language>eng</language><publisher>Piscataway NJ: IEEE</publisher><subject>Applied sciences ; Cooling ; Diodes ; Electronics ; Electrothermal effects ; Exact sciences and technology ; Impedance ; Light emitting diodes ; Nonlinear equations ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon ; SPICE ; Temperature dependence ; Thermal resistance ; Transistors ; Voltage</subject><ispartof>11th IEEE Mediterranean Electrotechnical Conference (IEEE Cat. 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No.02CH37379)</title><addtitle>MELECON</addtitle><description>An electrothermal model was developed for the built-in VDMOSFET diode. This model calculates the static and dynamic characteristics of the diode by taking into account the heating effect due to the diode's own losses and those of the VDMOSFET. The model's parameters were calculated from the catalog data, known relations from literature and the curve of the measured transient thermal impedance for constant current. The accuracy of the model in a simulation of the temperature dependence of the forward characteristic and the time course of silicon temperature was checked with a MEDICI two-dimensional device simulator.</description><subject>Applied sciences</subject><subject>Cooling</subject><subject>Diodes</subject><subject>Electronics</subject><subject>Electrothermal effects</subject><subject>Exact sciences and technology</subject><subject>Impedance</subject><subject>Light emitting diodes</subject><subject>Nonlinear equations</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon</subject><subject>SPICE</subject><subject>Temperature dependence</subject><subject>Thermal resistance</subject><subject>Transistors</subject><subject>Voltage</subject><isbn>0780375270</isbn><isbn>9780780375277</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2002</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNpFkD1PwzAURS0hJKD0F8DghTHlPTuvsUco5UNq6VBgrVz7WRg5TZSEgX9PpCJxlzucoztcIa4RZohgb9fL1XKxeZ0pADVDwJKUOREXUBnQFakKzsS0779gTEmIZM_F_bZNnqVv6tYNaZ9ZcmY_dM3wyV3tsqybwFk2UTq5_055KNJBfjysN9vH5ZsMaaSX4jS63PP0ryfifWSL52K1eXpZ3K2KhJqGAslTAMuxtLok1hSsxbnSbEgB22B0mEcFaCIb7fexBGuwUsFi5CrQXE_EzXG3db13OXbu4FO_a7tUu-5nh1SRHbdG7-roJWb-x8c79C_xFVQ4</recordid><startdate>2002</startdate><enddate>2002</enddate><creator>Sunde, V.</creator><creator>Butkovic, Z.</creator><creator>Bencic, Z.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope><scope>IQODW</scope></search><sort><creationdate>2002</creationdate><title>Spice compatible electrothermal model of a built-in VDMOSFET diode</title><author>Sunde, V. ; Butkovic, Z. ; Bencic, Z.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i135t-15c5d09ef49345e35d991623e8520e9d83d6f2018fe83cbf4098172d91fe7d563</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Applied sciences</topic><topic>Cooling</topic><topic>Diodes</topic><topic>Electronics</topic><topic>Electrothermal effects</topic><topic>Exact sciences and technology</topic><topic>Impedance</topic><topic>Light emitting diodes</topic><topic>Nonlinear equations</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon</topic><topic>SPICE</topic><topic>Temperature dependence</topic><topic>Thermal resistance</topic><topic>Transistors</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Sunde, V.</creatorcontrib><creatorcontrib>Butkovic, Z.</creatorcontrib><creatorcontrib>Bencic, Z.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection><collection>Pascal-Francis</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sunde, V.</au><au>Butkovic, Z.</au><au>Bencic, Z.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Spice compatible electrothermal model of a built-in VDMOSFET diode</atitle><btitle>11th IEEE Mediterranean Electrotechnical Conference (IEEE Cat. No.02CH37379)</btitle><stitle>MELECON</stitle><date>2002</date><risdate>2002</risdate><spage>49</spage><epage>53</epage><pages>49-53</pages><isbn>0780375270</isbn><isbn>9780780375277</isbn><abstract>An electrothermal model was developed for the built-in VDMOSFET diode. This model calculates the static and dynamic characteristics of the diode by taking into account the heating effect due to the diode's own losses and those of the VDMOSFET. The model's parameters were calculated from the catalog data, known relations from literature and the curve of the measured transient thermal impedance for constant current. The accuracy of the model in a simulation of the temperature dependence of the forward characteristic and the time course of silicon temperature was checked with a MEDICI two-dimensional device simulator.</abstract><cop>Piscataway NJ</cop><pub>IEEE</pub><doi>10.1109/MELECON.2002.1014528</doi><tpages>5</tpages></addata></record> |
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identifier | ISBN: 0780375270 |
ispartof | 11th IEEE Mediterranean Electrotechnical Conference (IEEE Cat. No.02CH37379), 2002, p.49-53 |
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language | eng |
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source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Applied sciences Cooling Diodes Electronics Electrothermal effects Exact sciences and technology Impedance Light emitting diodes Nonlinear equations Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon SPICE Temperature dependence Thermal resistance Transistors Voltage |
title | Spice compatible electrothermal model of a built-in VDMOSFET diode |
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