Efficient, narrow linewidth emission from InGaAs/AlGaAs V-groove quantum wire light-emitting diodes

We have succeeded to achieve highly efficient, narrow linewidth electroluminescence (EL) at room temperature from strained InGaAs quantum wire (QWR) light-emitting diodes (LEDs). The internal quantum efficiency is estimated to be as high as 60% for a single layer, 500-nm-pitch V-groove In/sub 0.15/G...

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Bibliographic Details
Main Authors: Weman, H., Sirigu, L., Leifer, K., Karlsson, K.F., Rudra, A., Kapon, E.
Format: Conference Proceeding
Language:English
Subjects:
Carrier confinement
Gallium arsenide
Indium gallium arsenide
Light emitting diodes
Photonics
Physics
Quantum dot lasers
Temperature
Wet etching
Wire
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Summary:We have succeeded to achieve highly efficient, narrow linewidth electroluminescence (EL) at room temperature from strained InGaAs quantum wire (QWR) light-emitting diodes (LEDs). The internal quantum efficiency is estimated to be as high as 60% for a single layer, 500-nm-pitch V-groove In/sub 0.15/Ga/sub 0.85/As QWR array LED, emitting at 1.29 eV (/spl lambda/ = 960 nm) with a linewidth as narrow as 14 meV. The high efficiency is achieved with the aid of selective carrier injection directly into the QWRs through self-ordered AlGaAs vertical quantum wells (VQWs), where the VQWs were separated from the InGaAs QWRs by thin GaAs spacer layers in order to reduce nonradiative recombination and inhomogeneous alloy broadening.
ISSN:1092-8669
DOI:10.1109/ICIPRM.2002.1014619