Demonstration of 3.5kV SiC Deep-Implanted Superjunction Didoes

Silicon carbide Superjunction Junction Barrier Schottky (JBS) diodes were fabricated with 24um thick drift layers using ultra-high energy implantation and epitaxial overgrowth. The resulting devices achieved breakdown voltages of 3.8kV with differential on-state resistances of 4.5\mathrm{m}\Omega\bu...

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Bibliographic Details
Main Authors: Ghandi, Reza, Hitchcock, Collin, Kennerly, Stacey, Torky, Mohamed, Chow, T. Paul
Format: Conference Proceeding
Language:English
Subjects:
Diode
Epitaxial growth
Epitaxial overgrowth
JBS Diode
PIN photodiodes
Power measurement
Schottky diodes
Semiconductor device measurement
Silicon carbide
Superjunction
Ultra high energy implant
Voltage measurement
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Summary:Silicon carbide Superjunction Junction Barrier Schottky (JBS) diodes were fabricated with 24um thick drift layers using ultra-high energy implantation and epitaxial overgrowth. The resulting devices achieved breakdown voltages of 3.8kV with differential on-state resistances of 4.5\mathrm{m}\Omega\bullet \text{cm}^{2} in the JBS linear region. This is about 45% lower than the conventional unipolar limit. When characterized dynamically, the JBS diode exhibited the negligible turn-on recovery and small reverse recovery expected of a unipolar device. On-off conduction cycling of co-fabricated PiN diodes showed no measurable increase in forward voltage drop or diode leakage after repeated bipolar conduction stressing.
ISSN:1946-0201
DOI:10.1109/ISPSD57135.2023.10147432