Development of 300 mm low-k dielectric for 0.13 /spl mu/m BEOL damascene process

This paper discusses the development of 300 mm CVD low-k dielectric for the 0.13 /spl mu/m technology Cu/low-k integration. A carbon doped oxide SiOC low-k dielectric was deposited in a 300 mm plasma enhanced CVD chamber using methylsilane-based precursor as the main source gas and other co-reactant...

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Bibliographic Details
Main Authors: Lu, J.C., Chang, W., Jang, S.M., Yu, C.H., Liang, M.S.
Format: Conference Proceeding
Language:English
Subjects:
Conducting materials
Copper
Dielectric constant
Etching
Plasma applications
Plasma materials processing
Plasma stability
Semiconductor films
Silicon carbide
Testing
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Summary:This paper discusses the development of 300 mm CVD low-k dielectric for the 0.13 /spl mu/m technology Cu/low-k integration. A carbon doped oxide SiOC low-k dielectric was deposited in a 300 mm plasma enhanced CVD chamber using methylsilane-based precursor as the main source gas and other co-reactant gases. The blanket as-deposited film has a dielectric constant of /spl les/ 3 to integrate with a SiC etching stop layer with dielectric constant of /spl les/ 5. Excellent stack film thermal stability and adhesion for the Cu CMP process leads to a successful integration of 300 mm Cu/low-k backend process.
DOI:10.1109/IITC.2002.1014888