Void free and low stress shallow trench isolation technology using P-SOG for sub 0.1 /spl mu/m device

Highly reliable void free shallow trench isolation (VF-STI) technology by employing polysilazane based inorganic spin-on-glass (P-SOG) is developed for sub-0.1 /spl mu/m devices. In order to overcome the difficulties from the gap-filling and accumulated mechanical stress in STI, a P-SOG pillar is in...

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Bibliographic Details
Main Authors: Jin-Hwa Heo, Soo-Jin Hong, Dong-Ho Ahn, Hyun-Duk Cho, Moon-Han Park, Fujihara, K., U-In Chung, Yong-Chul Oh, Joo-Tae Moon
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Compressive stress
Degradation
Hot carriers
Isolation technology
Leakage current
Paper technology
Probability distribution
Temperature measurement
Voltage
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Summary:Highly reliable void free shallow trench isolation (VF-STI) technology by employing polysilazane based inorganic spin-on-glass (P-SOG) is developed for sub-0.1 /spl mu/m devices. In order to overcome the difficulties from the gap-filling and accumulated mechanical stress in STI, a P-SOG pillar is introduced at the trench bottom. As a result, the P-SOG pillar, having low stress, improves data retention time and hot carrier immunity in 256 Mbit DRAM by reducing cumulative STI stress. In addition, VF-STI shows an excellent extendibility in terms of gap filling capability even at an aspect ratio of more than 10 without void formation.
DOI:10.1109/VLSIT.2002.1015422