Atomic-scale Crystal Phase Transformation of Atomic Layer Deposited Antimony Telluride Thin Films with Substrate-dependent Orientations

Among chalcogenides for phase-change memory, Sb 2 Te 3 is attracting attention for its huge potential, along with recent demands for atomic layer deposition (ALD). We aimed to study atomic-scale thin film growth and phase transformation of ALD Sb 2 Te 3 thin films with substrate dependency. Comparat...

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Bibliographic Details
Main Authors: Lee, Sangyoon, Seo, Jeongwoo, Sohn, Inkyu, Kang, Youngjae, Lee, Changseung, Yang, Wooyoung, Chung, Seung-Min, Kim, Hyungjun
Format: Conference Proceeding
Language:English
Subjects:
Antimony
antimony telluride
Atomic layer deposition
atomic-scale
Chalcogenides
crystal phase transformation
Crystals
Metallization
Resistance
substrate dependency
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Summary:Among chalcogenides for phase-change memory, Sb 2 Te 3 is attracting attention for its huge potential, along with recent demands for atomic layer deposition (ALD). We aimed to study atomic-scale thin film growth and phase transformation of ALD Sb 2 Te 3 thin films with substrate dependency. Comparatively, thin film growth trends of ALD Sb 2 Te 3 on SiO 2 and W substrate were studied by observing transformation of crystal structures, and trends in electrical resistivity. On SiO 2 , predominant amorphous phases at initial stage were observed, followed by polycrystalline island growth with randomly oriented grains. However, on crystalline W, the highly out-of-plane (00l) orientations and layer-by-layer growth was found.
ISSN:2380-6338
DOI:10.1109/IITC/MAM57687.2023.10154820