A Study of Resistivity Control for Subtractive Interconnects Using Ruthenium

Ruthenium is a candidate metal to replace copper for BEOL metal interconnects due to its electrical characteristics and direct etch capabilities. Electrical performance is a major consideration for "beyond copper" metals - especially as the line CD approaches 10nm where copper line resista...

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Main Authors: Rogers, Jack, Aizawa, Hirokazu, Joy, Nicholas, Rogalskyj, Sophia, Lee, Rinus, Imakita, Kenichi, Yu, Kai-Hung
Format: Conference Proceeding
Language:English
Subjects:
Chemical analysis
Conductivity
Copper
Etching
interconnect
Metallization
Resistance
Resistivity
Ruthenium
Subtractive Etch
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creator Rogers, Jack
Aizawa, Hirokazu
Joy, Nicholas
Rogalskyj, Sophia
Lee, Rinus
Imakita, Kenichi
Yu, Kai-Hung
description Ruthenium is a candidate metal to replace copper for BEOL metal interconnects due to its electrical characteristics and direct etch capabilities. Electrical performance is a major consideration for "beyond copper" metals - especially as the line CD approaches 10nm where copper line resistance increases significantly. In this report we show the impacts of liner material and direct metal etching on blanket and patterned wafer resistance, and use supporting physical and chemical analyses to confirm methods from both processes to decrease ruthenium resistivity.
doi_str_mv 10.1109/IITC/MAM57687.2023.10154851
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identifier EISSN: 2380-6338
ispartof 2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM), 2023, p.1-3
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source IEEE Xplore All Conference Series
subjects Chemical analysis
Conductivity
Copper
Etching
interconnect
Metallization
Resistance
Resistivity
Ruthenium
Subtractive Etch
title A Study of Resistivity Control for Subtractive Interconnects Using Ruthenium
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