The Impact of Parasitic Capacitance on the Memory Characteristics of 2T0C DRAM and New Writing Strategy

In this work, we systematically study the impact of capacitive coupling effect on the memory characteristics of 2T0C DRAM by both theoretical modeling and experiments. Then, based on the insights on capacitive coupling, we propose a new writing strategy for 2T0C DRAM, which can effectively enhance t...

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Bibliographic Details
Published in:IEEE electron device letters 2023-08, Vol.44 (8), p.1-1
Main Authors: Zheng, Liankai, Wang, Ziheng, Lin, Zhiyu, Si, Mengwei
Format: Article
Language:English
Subjects:
Capacitance
capacitive coupling effect
capacitorless DRAM
Couplings
Criteria
Dynamic random access memory
II-VI semiconductor materials
oxide semiconductor
Parasitics (electronics)
Random access memory
thin-film transistor
Transistors
Voltage measurement
Zinc oxide
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Summary:In this work, we systematically study the impact of capacitive coupling effect on the memory characteristics of 2T0C DRAM by both theoretical modeling and experiments. Then, based on the insights on capacitive coupling, we propose a new writing strategy for 2T0C DRAM, which can effectively enhance the memory window and retention at the same operation voltage. Finally, we demonstrate a high performance ZnO-based 2T0C DRAM cell with retention >1000 s under criterion of ΔV SN = 0.1 V. Through the proposed new method, the retention of 2T0C DRAM cell can be improved from 1200 s to >10000 s under criterion of V SN drop to a failure voltage of 0.5 V.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2023.3287942