Forming-Free Resistive Switching by Lateral Ag Ion Migration on MoS2

We present forming-free volatile resistive switching (RS) in lateral \mathbf{Ag}-\mathbf{MoS}_{2}-\mathbf{Pd} structures with micron-sized electrode gaps. Our devices exhibit highly repeatable volatile RS at switching voltages ~2 V, reasonably fast switching within \sim 6\mu \mathrm{s} at 5 V, and m...

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Bibliographic Details
Main Authors: Cruces, Sofia, Volkel, Lukas, Lee, Jimin, Esteki, Ardeshir, Braun, Dennis, Grundmann, Annika, Kalisch, Holger, Heuken, Michael, Vescan, Andrei, Daus, Alwin, Lemme, Max C.
Format: Conference Proceeding
Language:English
Subjects:
Behavioral sciences
Conferences
Electrodes
Ions
Silicon
Sulfur
Switches
Online Access:Request full text
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Summary:We present forming-free volatile resistive switching (RS) in lateral \mathbf{Ag}-\mathbf{MoS}_{2}-\mathbf{Pd} structures with micron-sized electrode gaps. Our devices exhibit highly repeatable volatile RS at switching voltages ~2 V, reasonably fast switching within \sim 6\mu \mathrm{s} at 5 V, and maintain volatile behavior at comparatively higher current compliance (100\ \mu \mathrm{A}) than other similar lateral RS devices.
ISSN:2161-4644
DOI:10.23919/SNW57900.2023.10183962