beta-Ga2O3 FinFETs by MacEtch: temperature dependent I-V characteristics

The high temperature performance of electronic devices using the emerging material, \beta -Ga 2 O 3 , is important for the high-power applications under extreme environments. In this work, the high aspect-ratio \beta -Ga 2 O 3 FinFETs were tested above room temperature up to 298°C in vacuum for the...

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Bibliographic Details
Main Authors: Ren, Zhongjie, Huang, Hsien-Chih, Lee, Hanwool, Chan, Clarence, Roberts, Henry C., Wu, Xihang, Waseem, Aadil, Zhu, Wenjuan, Li, Xiuling
Format: Conference Proceeding
Language:English
Subjects:
Electron devices
FinFETs
Hysteresis
Performance evaluation
Temperature
Temperature dependence
Temperature measurement
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Summary:The high temperature performance of electronic devices using the emerging material, \beta -Ga 2 O 3 , is important for the high-power applications under extreme environments. In this work, the high aspect-ratio \beta -Ga 2 O 3 FinFETs were tested above room temperature up to 298°C in vacuum for the first time. The hysteresis remained relatively stable (0.1 ∼ 0.35 V) for the 50°C to 150 °C measurements while it was exponentially increased when the temperature exceeded 150 °C and eventually reached 4.59V at 298°C. In addition, the specific on-resistance ( R_{on, sp} ) and subthreshold swing ( SS ) increased gradually with high temperature. This high temperature studies performed here can contribute to the future development of high performance 3-dimensional \beta -Ga 2 O 3 electron devices.
ISSN:2640-6853
DOI:10.1109/DRC58590.2023.10186924