Implementation of SIW Cavity in Commercial CMOS Technology for Sub-Terahertz Band Applications

For sub-terahertz band applications, two compact and low-loss on-chip substrate integrated waveguide (SIW) cavities are designed in CMOS technology. Compact size cavity is achieved by utilizing the folded ridge structure in the quarter mode SIW (QMSIW) structure which is loaded with complementary sp...

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Bibliographic Details
Main Authors: Thapa, Samundra K., Pokharel, Ramesh K., Barakat, Adel, Dong, Ruibing, Amakawa, Shuhei, Hara, Shinsuke, Watanabe, Issei, Kasamatsu, Akifumi
Format: Conference Proceeding
Language:English
Subjects:
Band-pass filters
cavity
CMOS technology
Loss measurement
Microwave antennas
Prototypes
Q-factor
sub-terahertz
substrate integrated waveguide (SIW)
System-on-chip
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Summary:For sub-terahertz band applications, two compact and low-loss on-chip substrate integrated waveguide (SIW) cavities are designed in CMOS technology. Compact size cavity is achieved by utilizing the folded ridge structure in the quarter mode SIW (QMSIW) structure which is loaded with complementary split-ring resonators (CSRRs). Two prototypes of the proposed QMSIW cavities with and without CSRR are fabricated in 1P6M CMOS technology. From the measurement, both cavities present return losses higher than 27 dB and external Q-factors higher than 140. The proposed work shows that even at such high frequencies, compact and low-loss SIWs can be fabricated in commercial CMOS technology and opens a window to utilizing such cavities for other low-loss components such as oscillators, on-chip bandpass filters and on-chip antennas for sub-terahertz band applications.
ISSN:2576-7216
DOI:10.1109/IMS37964.2023.10188161