Unipolar-Turn-Off Lateral Insulated-Gate Bipolar Transistor With On-Chip Biasing Circuit for Injection Control

• Published in: IEEE transactions on electron devices 2023-09, Vol.70 (9), p.4737-4742
• Main Authors: Yin, Youyi, Yang, Junjie, Zhang, Meng, Gao, Tian, Wang, Maojun, Wei, Jin
• Format: Article
• Language: English
• Subjects: Circuit design; Conductivity; Conductivity modulation; Doping; Electric potential; injection control; Insulated gate bipolar transistors; Modulation; MOSFET circuits; MOSFETs; Semiconductor devices; Switches; System-on-chip; Transistors; unipolar-turn-off lateral insulated-gate bipolar transistor (UTO-LIGBT); Voltage; VON–EOFF tradeoff
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2023.3294359

This work presents a unipolar-turn-off lateral insulated-gate bipolar transistor (UTO-LIGBT) that incorporates an auxiliary n-MOSFET and an on-chip biasing circuit. This design achieves fully conductivity-modulated bipolar conduction and purely unipolar turn-off. Numerical simulations were conducted to comprehensively analyze the performance and mechanism of the proposed UTO-LIGBT. The auxiliary n-MOSFET, located near the collector of the UTO-LIGBT, does not require an external floating driving signal. The on-chip biasing circuit is specifically designed to control the auxiliary n-MOSFET. During the UTO-LIGBT's on-state, the biasing circuit feeds a zero voltage to switch off the auxiliary n-MOSFET, resulting in the UTO-LIGBT being in a bipolar state with a low {V}_{ {\text{ON}}} . Prior to turn-off, the biasing circuit applies a positive voltage to activate the auxiliary n-MOSFET, causing the UTO-LIGBT to transition to a unipolar state with a low turn-off loss ( {E}_{ {\text{OFF}}} ), similar to a lateral power MOSFET. When the UTO-LIGBT is off, the biasing circuit blocks the high collector voltage in a self-adaptive manner.