Lithographic Performance and Insulation Reliability of a Novel i-Line Photosensitive Dielectric Material

In this study, we developed a novel negative-tone i-line photosensitive dielectric material (PSDM) with fine resolution and high insulation reliability. We achieved 0.7 micrometer L/S patterns with an aspect ratio of 3.7 using an i-line stepper with a numerical aperture (NA) of 0.5. We simulated the...

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Bibliographic Details
Main Authors: Inoue, Go, Yukimori, Daiki, Shibasaki, Kaho, Okuda, Ayano, Ishikawa, Nobuhiro, Han, Young-Gun, Kanayama, Taka, Suetsugu, Tadashi, Ogata, Toshiyuki
Format: Conference Proceeding
Language:English
Subjects:
Dielectric materials
DOF simulation
Electronic components
fine-pitch RDLs
Insulation
insulation reliability
Life estimation
Materials reliability
Micrometers
negative-tone
photosensitive dielectric material
Resistance
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Summary:In this study, we developed a novel negative-tone i-line photosensitive dielectric material (PSDM) with fine resolution and high insulation reliability. We achieved 0.7 micrometer L/S patterns with an aspect ratio of 3.7 using an i-line stepper with a numerical aperture (NA) of 0.5. We simulated the depth of focus (DOF) at NAs of 0.5 and 0.24 and obtained a PSDM with a wider DOF at an NA of 0.24. Further, we developed a test vehicle with 1 micrometer L/S patterns using the semi-additive process and evaluated the insulation reliability using a biased highly accelerated stress test (BHAST). The resistance was 100 megaohm after 200 h of the BHAST.
ISSN:2377-5726
DOI:10.1109/ECTC51909.2023.00016