Characterization of 300 mm Low Temperature SiCN PVD Films for Hybrid Bonding application

Hybrid bonding or surface activated bonding is becoming the technology to manufacture higher density first-level interconnects by addressing pitch scaling difficulties of solder interconnects. One of the major challenges for dielectric bonding is to decrease the process temperature to be compatible...

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Bibliographic Details
Main Authors: Brun, Xavier F., Hasan, Md M., Yang, Yi, Carazzetti, Patrik, Drechsel, Carl, Strolz, Ewald
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Dielectrics
hybrid bonding
low temperature annealing
Low temperature dielectric deposition
Plasmas
Silicon
Stacking
surface activation
Temperature control
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Summary:Hybrid bonding or surface activated bonding is becoming the technology to manufacture higher density first-level interconnects by addressing pitch scaling difficulties of solder interconnects. One of the major challenges for dielectric bonding is to decrease the process temperature to be compatible with stacking schemes and device limitations. In this paper, we focus on both low temperature SiCN dielectric deposition and low temperature annealing temperatures (
ISSN:2377-5726
DOI:10.1109/ECTC51909.2023.00098