Reliability Improvement of Low-temperature Sintered Nano-silver as Die Attachment by Porosity Optimization

Thermo-mechanical stress caused by the coefficient of thermal expansion (CTE) mismatch leads to the formation of cracks, delamination, and warpage in the sintered nano-silver (S-Ag) layer, which eventually results in the fatigue failure of SiC semiconductor devices. Herein, the gradient porosity dis...

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Bibliographic Details
Published in:IEEE transactions on components, packaging, and manufacturing technology (2011) packaging, and manufacturing technology (2011), 2023-08, Vol.13 (8), p.1-1
Main Authors: Zhang, Bowen, Zhang, Shaoqiong, Lu, Xinyan, Han, Lili, Mei, Yun-Hui
Format: Article
Language:English
Subjects:
Bonding
Delamination
Fatigue cracks
Fatigue failure
Finite element analysis
Finite element method
Low temperature
Optimization
Porosity
Reliability
Semiconductor devices
Shear strength
Shock tests
Silicon carbide
Silver
Simulation
Sintered nano-silver
Sintering
Sintering (powder metallurgy)
Strain
Stress
Stress distribution
Substrates
Thermal expansion
Thermal shock
Thermo-mechanical
Thermomechanical processes
Warpage
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Summary:Thermo-mechanical stress caused by the coefficient of thermal expansion (CTE) mismatch leads to the formation of cracks, delamination, and warpage in the sintered nano-silver (S-Ag) layer, which eventually results in the fatigue failure of SiC semiconductor devices. Herein, the gradient porosity distribution method was proposed to simultaneously reduce the maximum thermo-mechanical stress and homogenize the stress distribution. The influence of different porosity distribution on the maximum thermo-mechanical stress and strain in S-Ag layer was investigated by finite element simulation. The gradient porosity distribution structure (S1>2 and S12 and S12 and S1
ISSN:2156-3950
2156-3985
DOI:10.1109/TCPMT.2023.3299291