IMS-based integrated SiC-MOSFET bidirectional switches for advanced CSI implementation

This paper presents the design and proof-of-concept demonstration of an integrated silicon carbide MOSFET bi-directional switch, which is a fundamental building block of notable circuit topologies, including the current source inverter and the matrix converter. The focus of this paper is specificall...

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Bibliographic Details
Main Authors: Lee, Y., Aviles, S., Duchesne, C., Lasserre, P., Castellazzi, A.
Format: Conference Proceeding
Language:English
Subjects:
Bi-directional SiC MOSFET
Bidirectional control
Inductance
Insulated metal substrate (IMS)
Inverters
Metals
Packaging and integration
Power devices
Prototypes
Silicon carbide
Switches
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Summary:This paper presents the design and proof-of-concept demonstration of an integrated silicon carbide MOSFET bi-directional switch, which is a fundamental building block of notable circuit topologies, including the current source inverter and the matrix converter. The focus of this paper is specifically on the device's usage in current source inversion. The aim is to develop a commercially viable solution for large volume applications that delivers high electro-thermal performance, optimizing the system-level power density and efficiency. Thus, this study deals with electro-magnetic and electro-thermal design aspects for the bi-directional SiC switch to prevent breakage due to parasitic inductance and interconnection resistance. Additionally, the study showcases the system design process for applying the advanced three-phase current source inverter using prototypes.
ISSN:2150-6086
DOI:10.23919/ICPE2023-ECCEAsia54778.2023.10213803