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Improved photonic spin Hall effect by an induced polarization gradient in anisotropy- black phosphorous and its application to NO2 gas detection

This study introduces an enhanced and tunable conventional spin-dependent shift (CSDS) resulting from the photonic spin Hall effect (PSHE). The PSHE is caused by the separation of opposite spin states when linearly polarized light incidents on the interface of multilayer structures with a gradient i...

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Bibliographic Details
Published in:IEEE sensors journal 2023-09, Vol.23 (18), p.1-1
Main Authors: Kumar, Vinit, Srivastava, Rupam, Prajapati, Yogendra Kumar
Format: Article
Language:English
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Summary:This study introduces an enhanced and tunable conventional spin-dependent shift (CSDS) resulting from the photonic spin Hall effect (PSHE). The PSHE is caused by the separation of opposite spin states when linearly polarized light incidents on the interface of multilayer structures with a gradient in refractive index. To get the PSHE, the proposed structure consists of silver (Ag), silicon (Si), and anisotropic black phosphorous (BP). Here, Ag is used as a plasmonic layer. Silicon (Si) is utilized to enhance the evanescent field near the interface of the top black phosphorous (BP) layer and air. Here, the in-plane anisotropy of BP is used as a polarizer to tune the CSDS. The maximum CSDS of 50.67 μm is obtained at the optimal silicon thickness, i.e ., 13 nm, by tuning the rotation angle (ϕ) of BP to 34.50° for left-hand horizontal polarization, which is a greater in magnitude than the previously reported work on PSHE. In addition, the PSHE-proposed structure is used for nitrogen dioxide (NO 2 ) gas sensing because BP has a high molecular adsorption energy for NO 2 . The spin dependent sensitivity of 3212.88 μm/RIU is achieved at ϕ near of 22° for NO 2 gas sensing at Δn = 5 × 10 -3 . In addition, a finer value of limit of detection is also obtained for the proposed sensor ( i.e ., structure 3) as 9.95×10 -8 degree.RIU/μm.
ISSN:1530-437X
1558-1748
DOI:10.1109/JSEN.2023.3301965