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Nonlinear Properties of Hybrid ZnTe-on-Si Waveguides for Telecommunication Applications

Nonlinear photonic devices are critical for many integrated infrared platform applications such as supercontinuum generation and frequency combs. It also holds the promise of all-optical modulators that will surpass by orders of magnitude the current devices. Typically, these devices rely on Si mate...

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Bibliographic Details
Main Authors: Stoll, Katherine, Bhandari, Harish B., Maksimov, Oleg, Hansen, Katherine, Kimerling, Lionel, Agarwal, Anuradha, Serna, Samuel
Format: Conference Proceeding
Language:English
Subjects:
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Summary:Nonlinear photonic devices are critical for many integrated infrared platform applications such as supercontinuum generation and frequency combs. It also holds the promise of all-optical modulators that will surpass by orders of magnitude the current devices. Typically, these devices rely on Si material platforms that suffer from high nonlinear losses due to two-photon absorption (TPA). A novel, hybrid ZnTe-on-Si waveguide system is demonstrated and fully characterized via ellipsometry and a combination of a bidirectional top-hat spectral broadening measurement and a dispersive scan (D-Scan) experiment to extract the effective TPA coefficient (\beta_{TPA}) and optical Kerr coefficient (n 2 ) of the hybrid waveguide system. The experimentally characterized \beta_{TPA}=S.76x10^{-13}m/W of this ZnTe-on-Si system is an order of magnitude lower than pure Si waveguides with a comparable nonlinear Kerr coefficient, providing a promising material platform for future high-performance, low-loss, compact, integrated nonlinear infrared devices.
ISSN:2693-8316
DOI:10.1109/PN58661.2023.10222998