Effectiveness of c-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM

• Published in: IEEE journal of the Electron Devices Society 2023-01, Vol.11, p.1-1
• Main Authors: Yazaki, Naomi, Motoyoshi, Ryosuke, Numata, Shiyuu, Ohshima, Kazuaki, Egi, Yuji, Isaka, Fumito, Ohno, Toshikazu, Tezuka, Sachiaki, Hamada, Toshiki, Furutani, Kazuma, Tsuda, Kazuki, Matsuzaki, Takanori, Onuki, Tatsuya, Murakawa, Tsutomu, Kunitake, Hitoshi, Kobayashi, Masaharu, Yamazaki, Shunpei
• Format: Article
• Language: English
• Subjects: 1T1C; C-axis aligned crystalline In-Ga-Zn-O (CAAC-IGZO); C-axis aligned crystalline In-Ga-Zn-O (CAACIGZO); Capacitors; Electrodes; FeRAM; Ferroelectric films; Ferroelectric materials; Ferroelectricity; Field effect transistors; Indium gallium zinc oxide; Nonvolatile memory; Random access memory; Semiconductor devices; Single damascene; Tin; Voltage measurement
• ISSN: 2168-6734; 2168-6734
• DOI: 10.1109/JEDS.2023.3307124

Aiming to reduce the area of a ferroelectric random access memory (FeRAM), we fabricated an FeRAM having a 1T1C configuration by using a c-axis aligned crystalline In-Ga-Zn-O field-effect transistor, which we call OSFET, with a high breakdown voltage. A combination of the OSFET with L/W of 60 nm/60 nm and a single damascene ferroelectric capacitor (FECap) attained FE-Cap area reduction to 0.06 μm2 per cell. The FeRAM achieved a write time of 10 ns, a rewriting endurance of 109 cycles, and a data retention time of 100 min at 85°C. The OSFET is an optimal selector element for emerging memories.